Advances Made in Electronic Devices Using Widebandgap Semiconductors

Dr. Srabanti Chowdhury
Associate Professor EE Department, Stanford University, Palo Alto, CA

Cerent Engineering Science Complex, Salazar Hall 2009A
3:00 PM

Abstract - We live in extremely exciting times, often identified as age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. Renewable energy is now a reality. Robotics and autonomous vehicles are upon us. This new world needs new physical electronics solutions with new materials, devices and heterogeneous integration to drive these innovations to their full potential. Widebandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities. Semiconductor devices with higher power density have unprecedented value in both power and high frequency electronics. Reducing conversion losses helps minimizing consumption of limited resources; it simultaneously enables new compact solutions, the basis for offering increased power conversion performance at reduced system cost. GaN has also opened the door to other ultrawide bandgap materials such as Diamond, Aluminum Nitride and Gallium Oxide.

Dr. Srabanti Chowdhury is an Associate Prof. of EE at Stanford University and holds an adjunct faculty position at UC Davis. She received her M.S and PhD in EE UC Santa Barbara. She received the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She serves as the member of two committees under IEEE Electron Device Society. She has served the IEEE International Devices Meeting (IEDM) technical sub committee Electron served the IEEE International Electron on Power Devices & Compound Semiconductor and High Speed Devices (PC) subcommittee in 2016 and 2017. She was the PC subcommittee chair for IEDM-2018, and continues to serve the IEDM executive committee for 2019. She is a senior member of IEEE.